Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes
- Authors: Baidus N.V.1,2, Kukushkin V.A.1,3, Zvonkov B.N.2, Nekorkin S.M.2
-
Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Physical-Technical Research Institute
- Institute of Applied Physics
- Issue: Vol 50, No 11 (2016)
- Pages: 1554-1560
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198725
- DOI: https://doi.org/10.1134/S1063782616110026
- ID: 198725
Cite item
Abstract
As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quantum dots should be arranged on a heavily doped (to a dopant concentration of 1019 cm–3) GaAs buffer layer and be separated from the metal by a thin (10–30 nm thick) undoped GaAs cap layer. The interface between the metal (e.g., gold) and GaAs provides the efficient scattering of surface plasmon-polaritons to ordinary photons if it contains inhomogeneities shaped as metal-filled cavities with a characteristic size of ~30 nm and a surface concentration above 1010 cm–2.
About the authors
N. V. Baidus
Lobachevsky State University of Nizhny Novgorod; Physical-Technical Research Institute
Email: vakuk@appl.sci-nnov.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950; pr. Gagarina 23/3, Nizhny Novgorod, 603950
V. A. Kukushkin
Lobachevsky State University of Nizhny Novgorod; Institute of Applied Physics
Author for correspondence.
Email: vakuk@appl.sci-nnov.ru
Russian Federation, pr. Gagarina 23, Nizhny Novgorod, 603950; ul. Ul’yanova 46, Nizhny Novgorod, 603950
B. N. Zvonkov
Physical-Technical Research Institute
Email: vakuk@appl.sci-nnov.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950
S. M. Nekorkin
Physical-Technical Research Institute
Email: vakuk@appl.sci-nnov.ru
Russian Federation, pr. Gagarina 23/3, Nizhny Novgorod, 603950