Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
- Authors: Lobanov D.N.1,2, Novikov A.V.1,2, Yunin P.A.1, Skorohodov E.V.1, Shaleev M.V.1, Drozdov M.N.1, Khrykin O.I.1, Buzanov O.A.3, Alenkov V.V.3, Folomin P.I.4, Gritsenko A.B.4
-
Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University, Russian Academy of Sciences
- JSC Fomos-Materials
- The National University of Science and Technology “MISiS”
- Issue: Vol 50, No 11 (2016)
- Pages: 1511-1514
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198502
- DOI: https://doi.org/10.1134/S1063782616110166
- ID: 198502
Cite item
Abstract
In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La3Ga5SiO14 (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about ~520°C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion from langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition (~700°C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of ~1011 cm–2 and low surface roughness (<2 nm) is obtained.
About the authors
D. N. Lobanov
Institute for Physics of Microstructures; Lobachevsky State University, Russian Academy of Sciences
Author for correspondence.
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. V. Novikov
Institute for Physics of Microstructures; Lobachevsky State University, Russian Academy of Sciences
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
E. V. Skorohodov
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
M. V. Shaleev
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
M. N. Drozdov
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
O. I. Khrykin
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
O. A. Buzanov
JSC Fomos-Materials
Email: dima@ipmras.ru
Russian Federation, Moscow, 107023
V. V. Alenkov
JSC Fomos-Materials
Email: dima@ipmras.ru
Russian Federation, Moscow, 107023
P. I. Folomin
The National University of Science and Technology “MISiS”
Email: dima@ipmras.ru
Russian Federation, Moscow, 119991
A. B. Gritsenko
The National University of Science and Technology “MISiS”
Email: dima@ipmras.ru
Russian Federation, Moscow, 119991