Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
- Authors: Averichkin P.A.1, Donskov A.A.1, Dukhnovsky M.P.2, Knyazev S.N.1, Kozlova Y.P.3, Yugova T.G.1, Belogorokhov I.A.1
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Affiliations:
- State Research and Design Institute of Rare-Metal Industry Giredmet AO
- R & D Enterprise Istok
- Institute for Nuclear Research
- Issue: Vol 50, No 4 (2016)
- Pages: 555-558
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197034
- DOI: https://doi.org/10.1134/S1063782616040047
- ID: 197034
Cite item
Abstract
The results of using carbidsiliconoxide (a-C:SiO1.5) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH3–SiO1.5)n with cyclolinear (staircased) molecular structure, as intermediate films in the hydride vapor phase epitaxy of gallium nitride on polycrystalline CVD-diamond substrates are presented. In the pyrolysis annealing of (CH3–SiO1.5)n films in an atmosphere of nitrogen at a temperature of 1060°C, methyl radicals are carbonized to yield carbon atoms chemically bound to silicon. In turn, these atoms form a SiC monolayer on the surface of a-C:SiO1.5 films via covalent bonding with silicon. It is shown that GaN islands grow on such an intermediate layer on CVD-polydiamond substrates in the process of hydride vapor phase epitaxy in a vertical reactor from the GaCl–NH3–N2 gas mixture.
About the authors
P. A. Averichkin
State Research and Design Institute of Rare-Metal Industry Giredmet AO
Author for correspondence.
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
A. A. Donskov
State Research and Design Institute of Rare-Metal Industry Giredmet AO
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
M. P. Dukhnovsky
R & D Enterprise Istok
Email: P_Yugov@mail.ru
Russian Federation, Fryazino, Moscow oblast, 141190
S. N. Knyazev
State Research and Design Institute of Rare-Metal Industry Giredmet AO
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
Yu. P. Kozlova
Institute for Nuclear Research
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 117315
T. G. Yugova
State Research and Design Institute of Rare-Metal Industry Giredmet AO
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017
I. A. Belogorokhov
State Research and Design Institute of Rare-Metal Industry Giredmet AO
Email: P_Yugov@mail.ru
Russian Federation, Moscow, 119017