On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2) with time-modulated dc magnetron plasma
- Authors: Undalov Y.K.1, Terukov E.I.1,2, Gusev O.B.1, Trapeznikova I.N.1
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg State Electrotechnical University “LETI”
- Issue: Vol 50, No 4 (2016)
- Pages: 530-540
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/197016
- DOI: https://doi.org/10.1134/S1063782616040230
- ID: 197016
Cite item
Abstract
Activation of the process of amorphous-silicon-nanocluster formation in a hydrogenated amorphous- silicon suboxide matrix with time-modulated dc discharge plasma is investigated. The plasma is modulated by repeatedly switching on and off a dc magnetron magnetic coil. It is demonstrated that the resulting self-induction effect leads eventually to an increase in the probability of collisions between discharge electrons and gaseous components. The infrared (IR) spectra of the films showed that plasma modulation enhances predominantly the content of bridging oxygen in the a-SiOx:H matrix by strengthening the oxygenionization process. It is assumed that this also increases the concentration of silicon nanoclusters ncl-Si with an oxidized outer surface in the plasma and, thus, enhances the ncl-Si flux toward the electrodes of the dc magnetron. The photoluminescence spectra include two broad overlapping bands characteristic of amorphous ncl-Si with maxima in the range of 600–1000 nm.
About the authors
Yu. K. Undalov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
E. I. Terukov
Ioffe Physical–Technical Institute; St. Petersburg State Electrotechnical University “LETI”
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197376
O. B. Gusev
Ioffe Physical–Technical Institute
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. N. Trapeznikova
Ioffe Physical–Technical Institute
Email: undalov@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021