Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
- Authors: Aleksandrov I.A.1, Zhuravlev K.S.1, Mansurov V.G.2
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Issue: Vol 50, No 2 (2016)
- Pages: 191-194
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196762
- DOI: https://doi.org/10.1134/S1063782616020020
- ID: 196762
Cite item
Abstract
The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.
About the authors
I. A. Aleksandrov
Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
K. S. Zhuravlev
Institute of Semiconductor Physics, Siberian Branch
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
V. G. Mansurov
Novosibirsk State University
Email: Aleksandrov@isp.nsc.ru
Russian Federation, Novosibirsk, 630090