Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures
- 作者: Aleksandrov I.1, Zhuravlev K.1, Mansurov V.2
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隶属关系:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 50, 编号 2 (2016)
- 页面: 191-194
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/196762
- DOI: https://doi.org/10.1134/S1063782616020020
- ID: 196762
如何引用文章
详细
The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.
作者简介
I. Aleksandrov
Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: Aleksandrov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
K. Zhuravlev
Institute of Semiconductor Physics, Siberian Branch
Email: Aleksandrov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Mansurov
Novosibirsk State University
Email: Aleksandrov@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090