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Vol 52, No 10 (2018)
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide
Popov V.P., Antonov V.A., Vdovin V.I.
PDF
(Eng)
Vol 50, No 2 (2016)
Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
Tikhomirov V.G., Zemlyakov V.E., Volkov V.V., Parnes Y.M., Vyuginov V.N., Lundin W.V., Sakharov A.V., Zavarin E.E., Tsatsulnikov A.F., Cherkashin N.A., Mizerov M.N., Ustinov V.M.
PDF
(Eng)
Vol 53, No 15 (2019)
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
PDF
(Eng)
Vol 53, No 9 (2019)
Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate
Sushkov A.A., Pavlov D.A., Shengurov V.G., Denisov S.A., Chalkov V.Y., Baidus N.V., Rykov A.V., Kryukov R.N.
PDF
(Eng)
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