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Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers
Arkhipova E.A., Demidov E.V., Drozdov M.N., Kraev S.A., Shashkin V.I., Lobaev M.A., Vikharev A.L., Gorbachev A.M., Radishchev D.B., Isaev V.A., Bogdanov S.A.
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D.S., Shengurov V.G., Denisov S.A., Filatov D.O., Zdoroveishev A.V., Chalkov V.Y., Zaitsev A.V., Ved’ M.V., Dorokhin M.V., Baidakova N.A.
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates
Baidus N.V., Yunin P.A., Shaleev M.V., Reunov D.G., Rykov A.V., Novikov A.V., Nekorkin S.M., Kudryavtsev K.E., Krasilnik Z.F., Dubinov A.A., Aleshkin V.Y., Yurasov D.V.
Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide
Rut’kov E.V., Gall N.R.
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots
Parkhomenko Y.A., Dement’ev P.A., Moiseev K.D.
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
Mokhov D.V., Berezovskaya T.N., Nikitina E.V., Shubina K.Y., Mizerov A.M., Bouravleuv A.D.
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