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Vol 53, No 8 (2019)
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
Sorokin S.V., Avdienko P.S., Sedova I.V., Kirilenko D.A., Yagovkina M.A., Smirnov A.N., Davydov V.Y., Ivanov S.V.
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(Eng)
Vol 52, No 10 (2018)
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.
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(Eng)
Vol 53, No 16 (2019)
Selective Epitaxy of Submicron GaN Structures
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Mitrofanov M.I., Levitskii I.V., Voznyuk G.V., Evtikhiev V.P.
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(Eng)
Vol 53, No 10 (2019)
Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers
Andreev B.A., Lobanov D.N., Krasil’nikova L.V., Bushuykin P.A., Yablonskiy A.N., Novikov A.V., Davydov V.Y., Yunin P.A., Kalinnikov M.I., Skorohodov E.V., Krasil’nik Z.F.
PDF
(Eng)
Vol 53, No 8 (2019)
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Mizerov A.M., Arsentyev I.N., Leiste H., Rinke M.
PDF
(Eng)
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