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Автор туралы ақпарат

Samsonenko, Yu. B.

Шығарылым Бөлім Атауы Файл
Том 50, № 5 (2016) Physics of Semiconductor Devices Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
Том 52, № 1 (2018) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
Том 52, № 4 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Том 52, № 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. QUANTUM WELLS AND QUANTUM DOTS Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate