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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Kozyukhin, S. A.

Issue Section Title File
Vol 50, No 7 (2016) Amorphous, Vitreous, and Organic Semiconductors Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current mode
Vol 51, No 2 (2017) Electronic Properties of Semiconductors Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors
Vol 52, No 6 (2018) Fabrication, Treatment, and Testing of Materials and Structures Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
Vol 52, No 7 (2018) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223–293 K
Vol 52, No 15 (2018) Technological Processes and Routes Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating
 

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