| 期 | 栏目 | 标题 | 文件 | 
											
				| 卷 50, 编号 1 (2016) | Erratum | Erratum to: “Vacancies in epitaxial graphene” |  | 
												
				| 卷 50, 编号 3 (2016) | Carbon Systems | Model of Adsorption on Amorphous Graphene |  | 
												
				| 卷 50, 编号 6 (2016) | Carbon Systems | Substitutional impurity in single-layer graphene: The Koster–Slater and Anderson models |  | 
												
				| 卷 51, 编号 2 (2017) | Carbon Systems | On the theory of adsorption on graphene-like compounds |  | 
												
				| 卷 51, 编号 5 (2017) | Carbon Systems | Effect of intercalated hydrogen on the electron state of quasi-free graphene on a SiC substrate |  | 
												
				| 卷 52, 编号 2 (2018) | Carbon Systems | On the Extended Holstein–Hubbard Model for Epitaxial Graphene on Metal |  | 
												
				| 卷 52, 编号 3 (2018) | Carbon Systems | Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations |  | 
												
				| 卷 52, 编号 7 (2018) | Carbon Systems | Effect of Electron–Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene |  | 
												
				| 卷 53, 编号 1 (2019) | Carbon Systems | A Chainlike Model of the Zigzag Edge Decoration of Graphene |  | 
												
				| 卷 53, 编号 5 (2019) | Electronic Properties of Semiconductors | On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes |  | 
												
				| 卷 53, 编号 7 (2019) | Carbon Systems | Epitaxial Carbyne: Analytical Results |  |