Author Details
Arutyunyan, S. S.
| Issue | Section | Title | File |
| Vol 50, No 8 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs | |
| Vol 50, No 10 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |