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作者的详细信息

Sibirev, N. V.

期 栏目 标题 文件
卷 50, 编号 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On a new method of heterojunction formation in III–V nanowires
卷 52, 编号 1 (2018) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
卷 52, 编号 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Solar Cell Based on Core/Shell Nanowires
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Growth Modes of GaN Plasma-Assisted MBE Nanowires
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions
卷 52, 编号 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Two Methods of Calculation Ternary Nanowire Composition
卷 53, 编号 3 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires
卷 53, 编号 16 (2019) Nanostructures Technology Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires