Author Details

Sibirev, N. V.

Issue	Section	Title	File
Vol 50, No 12 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	On a new method of heterojunction formation in III–V nanowires
Vol 52, No 1 (2018)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
Vol 52, No 12 (2018)	Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018	Solar Cell Based on Core/Shell Nanowires
Vol 52, No 16 (2018)	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY	Growth Modes of GaN Plasma-Assisted MBE Nanowires
Vol 52, No 16 (2018)	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY	Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions
Vol 52, No 16 (2018)	26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY	Two Methods of Calculation Ternary Nanowire Composition
Vol 53, No 3 (2019)	Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors	On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires
Vol 53, No 16 (2019)	Nanostructures Technology	Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires