Author Details

Sibirev, N. V.

Issue Section Title File
Vol 50, No 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 On a new method of heterojunction formation in III–V nanowires
Vol 52, No 1 (2018) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases
Vol 52, No 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Solar Cell Based on Core/Shell Nanowires
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Growth Modes of GaN Plasma-Assisted MBE Nanowires
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Two Methods of Calculation Ternary Nanowire Composition
Vol 53, No 3 (2019) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires
Vol 53, No 16 (2019) Nanostructures Technology Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies