| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
On a new method of heterojunction formation in III–V nanowires |
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| Том 52, № 1 (2018) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases |
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| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Solar Cell Based on Core/Shell Nanowires |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Growth Modes of GaN Plasma-Assisted MBE Nanowires |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Estimation of Evaporation Rate from Gold-Silicon Alloy Based on the Nucleation Time and Nanowire Length Distributions |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Two Methods of Calculation Ternary Nanowire Composition |
|
| Том 53, № 3 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires |
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| Том 53, № 16 (2019) |
Nanostructures Technology |
Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires |
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