Автор туралы ақпарат

Scheglov, M. P.

Шығарылым	Бөлім	Атауы	Файл
Том 53, № 6 (2019)	Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)	Thick α-Ga₂O₃ Layers on Sapphire Substrates Grown by Halide Epitaxy
Том 53, № 11 (2019)	Surfaces, Interfaces, and Thin Films	Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy