| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
|
| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
| Vol 51, No 3 (2017) |
Spectroscopy, Interaction with Radiation |
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation |
|
| Vol 52, No 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method |
|
