| Edição |
Seção |
Título |
Arquivo |
| Volume 51, Nº 5 (2017) |
Surfaces, Interfaces, and Thin Films |
Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium |
|
| Volume 51, Nº 5 (2017) |
Physics of Semiconductor Devices |
Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters |
|
| Volume 52, Nº 1 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide |
|
| Volume 52, Nº 10 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions |
|
| Volume 53, Nº 12 (2019) |
Physics of Semiconductor Devices |
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters |
|
