Author Details
Aliguliyeva, Kh.
| Issue | Section | Title | File |
| Vol 51, No 4 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers | |
| Vol 51, No 7 (2017) | Electronic Properties of Semiconductors | Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals | |
| Vol 53, No 3 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals | |
| Vol 53, No 7 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |