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Author Details

Neizvestny, I. G.

Issue Section Title File
Vol 50, No 4 (2016) Electronic Properties of Semiconductors Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation
Vol 52, No 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology Сoncentric GaAs Nanorings Growth Modelling
Vol 52, No 7 (2018) Electronic Properties of Semiconductors Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion
Vol 52, No 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation
Vol 53, No 16 (2019) Nanostructures Technology Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation
Vol 53, No 16 (2019) Nanostructures Technology Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation