| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 4 (2016) |
Electronic Properties of Semiconductors |
Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Сoncentric GaAs Nanorings Growth Modelling |
|
| Том 52, № 7 (2018) |
Electronic Properties of Semiconductors |
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY |
Monte Carlo Simulation of Ga Droplet Movement during the GaAs Langmuir Evaporation |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation |
|
| Том 53, № 16 (2019) |
Nanostructures Technology |
Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation |
|
