Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Galiev, G. B.
Issue
Section
Title
File
Vol 50, No 2 (2016)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Vol 51, No 3 (2017)
Spectroscopy, Interaction with Radiation
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
Vol 51, No 4 (2017)
Physics of Semiconductor Devices
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
Vol 51, No 6 (2017)
Electronic Properties of Semiconductors
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
Vol 52, No 3 (2018)
Fabrication, Treatment, and Testing of Materials and Structures
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures
Vol 53, No 2 (2019)
Fabrication, Treatment, and Testing of Materials and Structures
Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates
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