| Issue |
Section |
Title |
File |
| Vol 51, No 9 (2017) |
Surfaces, Interfaces, and Thin Films |
Generation of surface electron states with a silicon–ultrathin-oxide interface under the field-induced damage of metal–oxide–semiconductor structures |
|
| Vol 53, No 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements |
|
| Vol 53, No 1 (2019) |
Physics of Semiconductor Devices |
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect |
|
| Vol 53, No 4 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures |
|
