| Edição | Seção | Título | Arquivo | 
											
				| Volume 51, Nº 1 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types |  | 
												
				| Volume 51, Nº 8 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Experimental studies of the effects of atomic ordering in epitaxial GaxIn1–xP alloys on their structural and morphological properties |  | 
												
				| Volume 52, Nº 1 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) |  | 
												
				| Volume 52, Nº 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |  | 
												
				| Volume 52, Nº 14 (2018) | Lasers and Optoelectronic Devices | Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure |  |