Informaçao sobre o Autor

Lobanov, D. N.

Edição	Seção	Título	Arquivo
Volume 50, Nº 2 (2016)	Fabrication, Treatment, and Testing of Materials and Structures	Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Volume 50, Nº 11 (2016)	XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016	Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
Volume 51, Nº 12 (2017)	XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017	Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
Volume 53, Nº 10 (2019)	Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019	Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers