Автор туралы ақпарат
Lobanov, D. N.
| Шығарылым | Бөлім | Атауы | Файл |
| Том 50, № 2 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements | |
| Том 50, № 11 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method | |
| Том 51, № 12 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen | |
| Том 53, № 10 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers |