Author Details
Nikolaev, A. E.
| Issue | Section | Title | File |
| Vol 50, No 9 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs | |
| Vol 53, No 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates |