Author Details
Murel, A. V.
| Issue | Section | Title | File |
| Vol 50, No 12 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron | |
| Vol 51, No 8 (2017) | Erratum | Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron” | |
| Vol 51, No 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy |