Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Leyderman, A.
Issue
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File
Vol 52, No 9 (2018)
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
Effect of Injection Depletion in
p
-Si–
n
-(Si
2
)
1 –
x
(ZnSe)
x
(0 ≤
x
≤ 0.01) Heterostructure
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