Author Details
Lazarenko, A. A.
Issue | Section | Title | File |
Vol 50, No 5 (2016) | Physics of Semiconductor Devices | GaAs/InGaAsN heterostructures for multi-junction solar cells | |
Vol 51, No 2 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates | |
Vol 51, No 4 (2017) | Physics of Semiconductor Devices | Optimization of vertical cavity lasers with intracavity metal layers | |
Vol 52, No 16 (2018) | 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY | Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy |