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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Bobyl, A. V.

Issue Section Title File
Vol 50, No 2 (2016) Physics of Semiconductor Devices Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon
Vol 51, No 1 (2017) Fabrication, Treatment, and Testing of Materials and Structures Surface texture of single-crystal silicon oxidized under a thin V2O5 layer
Vol 51, No 9 (2017) Physics of Semiconductor Devices Degradation of micromorphous thin-film silicon (α-Si/μc-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring
Vol 52, No 13 (2018) Fabrication, Treatment, and Testing of Materials and Structures New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters
 

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