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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Ankudinov, A. V.

Issue Section Title File
Vol 51, No 5 (2017) Surfaces, Interfaces, and Thin Films Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium
Vol 52, No 6 (2018) Fabrication, Treatment, and Testing of Materials and Structures Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation
Vol 53, No 12 (2019) Physics of Semiconductor Devices Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters
Vol 53, No 14 (2019) Nanostructures Characterization A New Algorithm for Measuring the Young’s Modulus of Suspended Nanoobjects by the Bending-Based Test Method of Atomic Force Microscopy
 

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