Edição |
Título |
Arquivo |
Volume 50, Nº 4 (2016) |
Optical and structural properties of Cu2ZnSnS4 thin films obtained by pulsed laser deposition in a H2S atmosphere with subsequent annealing in a N2 atmosphere |
 (Eng)
|
Teterina G., Nevolin V., Sipaylo I., Medvedeva S., Teterin P.
|
Volume 50, Nº 4 (2016) |
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy |
 (Eng)
|
Averichkin P., Donskov A., Dukhnovsky M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
|
Volume 50, Nº 4 (2016) |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
 (Eng)
|
Vasil’evskii I., Pushkarev S., Grekhov M., Vinichenko A., Lavrukhin D., Kolentsova O.
|
Volume 50, Nº 3 (2016) |
Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers |
 (Eng)
|
Yugov A., Malahov S., Donskov A., Duhnovskii M., Knyazev S., Kozlova Y., Yugova T., Belogorokhov I.
|
Volume 50, Nº 3 (2016) |
Formation of Cadmium-Sulfide Nanowhiskers via Vacuum Evaporation and Condensation in a Quasi-Closed Volume |
 (Eng)
|
Belyaev A., Antipov V., Rubets V.
|
Volume 50, Nº 3 (2016) |
Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion |
 (Eng)
|
Ken O., Levitskii V., Yavsin D., Gurevich S., Davydov V., Sreseli O.
|
Volume 50, Nº 2 (2016) |
Electrochemical characteristics of nanostructured silicon anodes for lithium-ion batteries |
 (Eng)
|
Astrova E., Li G., Rumyantsev A., Zhdanov V.
|
Volume 50, Nº 2 (2016) |
Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements |
 (Eng)
|
Lobanov D., Novikov A., Andreev B., Bushuykin P., Yunin P., Skorohodov E., Krasilnikova L.
|
Volume 50, Nº 2 (2016) |
Light-emitting nanocomposites on the basis of ZnS:Cu deposited into porous anodic Al2O3 matrices |
 (Eng)
|
Valeev R., Petukhov D., Chukavin A., Beltiukov A.
|
Volume 50, Nº 2 (2016) |
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride |
 (Eng)
|
Korolev D., Mikhaylov A., Belov A., Vasiliev V., Guseinov D., Okulich E., Shemukhin A., Surodin S., Nikolitchev D., Nezhdanov A., Pirogov A., Pavlov D., Tetelbaum D.
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