Enviar artigo por via de e-mail Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation
- Autores: Spirina A.1, Neizvestny I.1,2, Shwartz N.1,2
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Edição: Volume 53, Nº 16 (2019)
- Páginas: 2125-2128
- Seção: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207614
- DOI: https://doi.org/10.1134/S1063782619120297
- ID: 207614
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Resumo
The initial stages of planar self-catalyzed GaAs nanowire growth via the vapor-liquid-solid mechanism are considered by a kinetic lattice Monte Carlo model. The shapes of the nanocrystals being formed under a catalyzed droplet are presented for three GaAs substrate orientations (111)A, (111)B, (001). The most stable planar GaAs nanowire growth was observed on GaAs(111)A substrates.
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Sobre autores
A. Spirina
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: spirina.anna.alex@gmail.com
Rússia, Novosibirsk
I. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
Rússia, Novosibirsk; Novosibirsk
N. Shwartz
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: spirina.anna.alex@gmail.com
Rússia, Novosibirsk; Novosibirsk
