Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix

Аннотация

The results of investigating charge-transfer processes in thin layers of a vitreous system (As₂Se₃)_100 – xBi_x are presented. A power-law dependence of the conductivity on the frequency and a decrease in the exponent s with increasing temperature are found. Charge transfer is a thermally activated process with two regions in the temperature dependence of the conductivity with the activation energies E₁ = 0.12 ± 0.01 eV and E₂ = 0.23 ± 0.01 eV, respectively. The results are explained in terms of the correlated barrier hopping (CBH) model of hopping conductivity in disordered systems. The main microparameters of the system are calculated: the density of localized states (N), the hopping length (R_ω), and the largest height of the potential barrier (W_M).