Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States
- 作者: Romanov V.1, Kozhevnikov V.1, Bagraev N.1,2
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隶属关系:
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- 期: 卷 53, 编号 12 (2019)
- 页面: 1633-1636
- 栏目: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/207378
- DOI: https://doi.org/10.1134/S106378261916022X
- ID: 207378
如何引用文章
详细
The observation of de Haas–van Alphen oscillations when studying the silicon nanostructure at room temperature in weak magnetic fields enables the use of thermodynamic relations to calculate the density of states at the Fermi level at critical values of external magnetic-field strengths for integer filling factors.
作者简介
V. Romanov
Peter the Great St. Petersburg Polytechnic University
Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251
V. Kozhevnikov
Peter the Great St. Petersburg Polytechnic University
Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251
N. Bagraev
Peter the Great St. Petersburg Polytechnic University; Ioffe Institute
编辑信件的主要联系方式.
Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251; St. Petersburg, 194021