De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States


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详细

The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.

作者简介

V. Romanov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251

V. Kozhevnikov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251

C. Tracey

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251

N. Bagraev

Peter the Great St. Petersburg Polytechnic University; Ioffe Institute

编辑信件的主要联系方式.
Email: Bagraev@mail.ru
俄罗斯联邦, St. Petersburg, 195251; St. Petersburg, 194021


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