Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds
- Авторы: Breev I.1, Anisimov A.1, Wolfson A.1, Kazarova O.1, Mokhov E.2
-
Учреждения:
- Ioffe Institute
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
- Выпуск: Том 53, № 11 (2019)
- Страницы: 1558-1561
- Раздел: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/207337
- DOI: https://doi.org/10.1134/S1063782619110034
- ID: 207337
Цитировать
Аннотация
The Raman-scattering technique is used to analyze the structural quality of bulk AlN crystals grown by sublimation on SiC and AlN seeds. Growth on SiC seeds is conducted with retention of the SiC seed during growth (type 1) and with total evaporation of the SiC seed (type 2). Growth on AlN seeds is conducted in tungsten containers with no graphite parts (type 3). According to the analysis of Raman spectra, the highest quality is inherent in type-3 crystals that exhibit minimal full widths at half maximum of Raman lines. The experimentally observed specific features are defined by differences in the mechanism of growth and by the content of dopant impurities in the crystals grown.
Ключевые слова
Об авторах
I. Breev
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Россия, St. Petersburg, 194021
A. Anisimov
Ioffe Institute
Автор, ответственный за переписку.
Email: aan0100@gmail.com
Россия, St. Petersburg, 194021
A. Wolfson
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Россия, St. Petersburg, 194021
O. Kazarova
Ioffe Institute
Email: Mokhov@mail.ioffe.ru
Россия, St. Petersburg, 194021
E. Mokhov
St. Petersburg National Research University of Information Technologies, Mechanics, and Optics (ITMO University)
Автор, ответственный за переписку.
Email: Mokhov@mail.ioffe.ru
Россия, St. Petersburg, 197101