Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality
- Authors: Nadtochiy A.M.1, Mintairov S.A.2, Kalyuzhnyy N.A.2, Maximov M.V.1, Sannikov D.A.3,4, Yagafarov T.F.3, Zhukov A.E.1
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Affiliations:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- Ioffe Institute
- Skolkovo Institute of Science and Technology
- Lebedev Physical Institute, Russian Academy of Sciences
- Issue: Vol 53, No 11 (2019)
- Pages: 1489-1495
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/207294
- DOI: https://doi.org/10.1134/S1063782619110150
- ID: 207294
Cite item
Abstract
The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.
About the authors
A. M. Nadtochiy
St. Petersburg National Research Academic University, Russian Academy of Sciences
Author for correspondence.
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Mintairov
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Kalyuzhnyy
Ioffe Institute
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Maximov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
D. A. Sannikov
Skolkovo Institute of Science and Technology; Lebedev Physical Institute, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, Moscow, 121205; Moscow, 119333
T. F. Yagafarov
Skolkovo Institute of Science and Technology
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, Moscow, 121205
A. E. Zhukov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: al.nadtochy@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021