Мақаланы E-mail арқылы жіберу Low-Temperature Ta/Al-Based Ohmic Contacts to AlGaN/GaN Heteroepitaxial Structures on Silicon Wafers
- Авторлар: Erofeev E.V.1, Fedin I.V.1, Fedina V.V.1, Fazleev A.P.2
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Мекемелер:
- Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
- “Mikran” Research and Production Company
- Шығарылым: Том 53, № 2 (2019)
- Беттер: 237-240
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/205754
- DOI: https://doi.org/10.1134/S1063782619020064
- ID: 205754
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Аннотация
The formation features of a low-temperature Ta/Al-based ohmic contact to Al0.25Ga0.75N/GaN heteroepitaxial structures on silicon substrates are studied. The fabricated ohmic contacts based on Ta/Al/Ti (10/300/20 nm) compositions have a low contact resistance (0.4 Ω mm) and smooth surface morphology of the contact area and its edge after 60-s annealing at T = 550°C in a nitrogen atmosphere.
Авторлар туралы
E. Erofeev
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Хат алмасуға жауапты Автор.
Email: erofeev@sibmail.com
Ресей, Tomsk, 634034
I. Fedin
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Email: erofeev@sibmail.com
Ресей, Tomsk, 634034
V. Fedina
Research Institute of Electrical Communication Systems, Tomsk State University of Control Systems and Radioelectronics
Email: erofeev@sibmail.com
Ресей, Tomsk, 634034
A. Fazleev
“Mikran” Research and Production Company
Email: erofeev@sibmail.com
Ресей, Tomsk, 634045
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