Diode Lasers with Near-Surface Active Region
- Autores: Payusov A.1,2, Gordeev N.1, Serin A.1, Kulagina M.1, Kalyuzhnyy N.1, Mintairov S.1, Maximov M.2, Zhukov A.2,3
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Afiliações:
- Ioffe institute
- St Petersburg National Research Academic University
- Peter the Great Polytechnic University
- Edição: Volume 52, Nº 14 (2018)
- Páginas: 1901-1904
- Seção: Lasers and Optoelectronic Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205151
- DOI: https://doi.org/10.1134/S1063782618140233
- ID: 205151
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Resumo
Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10–3 K/(W cm2).
Sobre autores
A. Payusov
Ioffe institute; St Petersburg National Research Academic University
Email: zhukale@gmail.com
Rússia, St. Petersburg; St. Petersburg
N. Gordeev
Ioffe institute
Email: zhukale@gmail.com
Rússia, St. Petersburg
A. Serin
Ioffe institute
Email: zhukale@gmail.com
Rússia, St. Petersburg
M. Kulagina
Ioffe institute
Email: zhukale@gmail.com
Rússia, St. Petersburg
N. Kalyuzhnyy
Ioffe institute
Email: zhukale@gmail.com
Rússia, St. Petersburg
S. Mintairov
Ioffe institute
Email: zhukale@gmail.com
Rússia, St. Petersburg
M. Maximov
St Petersburg National Research Academic University
Email: zhukale@gmail.com
Rússia, St. Petersburg
A. Zhukov
St Petersburg National Research Academic University; Peter the Great Polytechnic University
Autor responsável pela correspondência
Email: zhukale@gmail.com
Rússia, St. Petersburg; St. Petersburg