Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates
- 作者: Alekseev P.1, Dunaevskiy M.1, Mikhailov A.1, Lebedev S.2, Lebedev A.1, Ilkiv I.3, Khrebtov A.2, Bouravleuv A.1,3,4, Cirlin G.2,3,4
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隶属关系:
- Ioffe Institute
- ITMO University
- St. Petersburg Academic University
- Institute for Analytical Instrumentation, Russian Academy of Sciences
- 期: 卷 52, 编号 12 (2018)
- 页面: 1611-1615
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204807
- DOI: https://doi.org/10.1134/S1063782618120047
- ID: 204807
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详细
The electrical properties of GaAs nanowires grown on a 6H-SiC (0001) substrate covered with graphene single layers and bilayers are studied. The nanowires are grown by molecular-beam epitaxy, with gold as a catalyst. The electrical properties are studied by measuring and analyzing the current–voltage characteristics of single nanowires vertically grown on a substrate. Numerical simulation of the experimental current–voltage curves revealed the presence of a ~0.6-V-high Schottky barrier between the nanowires and graphene. The appearance of the barrier is due to the formation of excess arsenic at the nanowire/graphene interface.
作者简介
P. Alekseev
Ioffe Institute
编辑信件的主要联系方式.
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021
M. Dunaevskiy
Ioffe Institute
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Mikhailov
Ioffe Institute
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021
S. Lebedev
ITMO University
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 197101
A. Lebedev
Ioffe Institute
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021
I. Ilkiv
St. Petersburg Academic University
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Khrebtov
ITMO University
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 197101
A. Bouravleuv
Ioffe Institute; St. Petersburg Academic University; Institute for Analytical Instrumentation, Russian Academy of Sciences
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
G. Cirlin
ITMO University; St. Petersburg Academic University; Institute for Analytical Instrumentation, Russian Academy of Sciences
Email: npoxep@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 194021; St. Petersburg, 190103