Estimation of the Temperature of the Current Filament that Forms upon Switching in GeSbTe
- Авторлар: Fefelov S.1, Kazakova L.1,2, Bogoslovskiy N.1, Tsendin K.1
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Мекемелер:
- Ioffe Institute
- St. Petersburg State Forest Technical University
- Шығарылым: Том 52, № 12 (2018)
- Беттер: 1607-1610
- Бөлім: Amorphous, Vitreous, and Organic Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204805
- DOI: https://doi.org/10.1134/S1063782618120084
- ID: 204805
Дәйексөз келтіру
Аннотация
The current–voltage characteristics of thin-film samples of the GeSbTe system are measured in the current control mode. Voltage oscillations observed after switching are investigated. It is shown that these oscillations can be associated with the formation of a hot current filament and its gradual cooling. The size and temperatures of the current filament are estimated. It is shown that the characteristic temperature in the hot current filament corresponds to the temperature of the phase transition to the crystalline state.
Авторлар туралы
S. Fefelov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: s.fefelov@list.ru
Ресей, St. Petersburg, 194021
L. Kazakova
Ioffe Institute; St. Petersburg State Forest Technical University
Email: s.fefelov@list.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
N. Bogoslovskiy
Ioffe Institute
Email: s.fefelov@list.ru
Ресей, St. Petersburg, 194021
K. Tsendin
Ioffe Institute
Email: s.fefelov@list.ru
Ресей, St. Petersburg, 194021