Мақаланы E-mail арқылы жіберу Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au
- Авторлар: Zainabidinov S.1, Tursunov I.1, Khimmatkulov O.1
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Мекемелер:
- National University of Uzbekistan
- Шығарылым: Том 52, № 8 (2018)
- Беттер: 1027-1030
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203848
- DOI: https://doi.org/10.1134/S1063782618080262
- ID: 203848
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The influence of hydrostatic pressure on the current–voltage characteristics of surface-barrier diode structures of the Sb–p-Si〈Mn〉–Au type are investigated. The potential-barrier height and the baric coefficient of its variation are found to be eϕδ = 0.75 eV and δ =–1.54 × 10–11 eV/Pa, respectively.
Авторлар туралы
S. Zainabidinov
National University of Uzbekistan
Хат алмасуға жауапты Автор.
Email: ikromjon0804@gmail.com
Өзбекстан, Tashkent, 100174
I. Tursunov
National University of Uzbekistan
Email: ikromjon0804@gmail.com
Өзбекстан, Tashkent, 100174
O. Khimmatkulov
National University of Uzbekistan
Email: ikromjon0804@gmail.com
Өзбекстан, Tashkent, 100174
