Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure
- 作者: Tregulov V.1, Litvinov V.2, Ermachikhin A.2
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隶属关系:
- Ryazan State University named for S. Yesenin
- Ryazan State Radio Engineering University
- 期: 卷 52, 编号 7 (2018)
- 页面: 891-896
- 栏目: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/203669
- DOI: https://doi.org/10.1134/S1063782618070242
- ID: 203669
如何引用文章
详细
The temperature dependence of the forward and reverse portions of the current–voltage characteristic and the photovoltage spectrum of a CdS/por-Si/p-Si semiconductor heterostructure are studied. It is found that the current-flow mechanisms are controlled by generation–recombination processes in the spacecharge region of the por-Si/p-Si heterojunction, carrier tunneling in the por-Si film, and the model of space-charge-limited currents. A simplified version of the energy-band diagram of the heterostructure under study is proposed.
作者简介
V. Tregulov
Ryazan State University named for S. Yesenin
编辑信件的主要联系方式.
Email: trww@yandex.ru
俄罗斯联邦, Ryazan, 390000
V. Litvinov
Ryazan State Radio Engineering University
Email: trww@yandex.ru
俄罗斯联邦, Ryazan, 390005
A. Ermachikhin
Ryazan State Radio Engineering University
Email: trww@yandex.ru
俄罗斯联邦, Ryazan, 390005