Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
- 作者: Malin T.1, Milakhin D.1, Mansurov V.1, Galitsyn Y.1, Kozhuhov A.1, Ratnikov V.2, Smirnov A.2, Davydov V.2, Zhuravlev K.1,3
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隶属关系:
- Rzhanov Institute of Semiconductor Physics
- Ioffe Institute
- Novosibirsk State University
- 期: 卷 52, 编号 6 (2018)
- 页面: 789-796
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/203547
- DOI: https://doi.org/10.1134/S1063782618060143
- ID: 203547
如何引用文章
详细
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.
作者简介
T. Malin
Rzhanov Institute of Semiconductor Physics
编辑信件的主要联系方式.
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Milakhin
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Mansurov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
Yu. Galitsyn
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Kozhuhov
Rzhanov Institute of Semiconductor Physics
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Ratnikov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, St. Petersburg, 194021
A. Smirnov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, St. Petersburg, 194021
V. Davydov
Ioffe Institute
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, St. Petersburg, 194021
K. Zhuravlev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: mal-tv@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090