Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
- Авторы: Timoshnev S.1, Mizerov A.1, Sobolev M.1, Nikitina E.1
-
Учреждения:
- Saint Petersburg National Research Academic University of the Russian Academy of Sciences
- Выпуск: Том 52, № 5 (2018)
- Страницы: 660-663
- Раздел: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203319
- DOI: https://doi.org/10.1134/S1063782618050342
- ID: 203319
Цитировать
Аннотация
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
Об авторах
S. Timoshnev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Автор, ответственный за переписку.
Email: timoshnev@mail.ru
Россия, St. Petersburg, 194021
A. Mizerov
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Россия, St. Petersburg, 194021
M. Sobolev
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Россия, St. Petersburg, 194021
E. Nikitina
Saint Petersburg National Research Academic University of the Russian Academy of Sciences
Email: timoshnev@mail.ru
Россия, St. Petersburg, 194021