Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well
- Авторы: Danilov L.1, Mikhailova M.1, Levin R.1, Konovalov G.1, Ivanov E.1, Andreev I.1, Pushnyi B.1, Zegrya G.1
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Учреждения:
- Ioffe Institute
- Выпуск: Том 52, № 4 (2018)
- Страницы: 493-496
- Раздел: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
- URL: https://journals.rcsi.science/1063-7826/article/view/202848
- DOI: https://doi.org/10.1134/S1063782618040115
- ID: 202848
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Аннотация
n-GaSb/n-InAs/p-GaSb heterostructure with a single InAs QW was grown for the first time by MOVPE. Photocurrent spectra were obtained at reverse bias in the range from 0 to 0.8 V. It was shown that the photocurrent increases nonlinearly. The maximum of differential photoconductivity is archived at low applied voltage up to 0.2 V. This effect was explained by electrostatic screening of electrons localized in QW.
Об авторах
L. Danilov
Ioffe Institute
Автор, ответственный за переписку.
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
M. Mikhailova
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
R. Levin
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
G. Konovalov
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
E. Ivanov
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
I. Andreev
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
B. Pushnyi
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021
G. Zegrya
Ioffe Institute
Email: danleon84@mail.ru
Россия, St. Petersburg, 194021