Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics

A. F. Shimanskii; T. O. Pavlyuk; S. A. Kopytkova; R. A. Filatov; A. N. Gorodishcheva

doi:10.1134/S1063782618020161

Effect of the Addition of Silicon on the Properties of Germanium Single Crystals for IR Optics

Авторлар: Shimanskii A.¹, Pavlyuk T.², Kopytkova S.², Filatov R.¹, Gorodishcheva A.³
Мекемелер:
1. Siberian Federal University
2. Germanium Joint-stock company
3. Reshetnev Siberian State Aerospace University
Шығарылым: Том 52, № 2 (2018)
Беттер: 264-267
Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://journals.rcsi.science/1063-7826/article/view/202495
DOI: https://doi.org/10.1134/S1063782618020161
ID: 202495

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Аннотация

Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals.