Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells
- Авторы: Pavlov N.1, Zegrya G.1,2, Zegrya A.1, Bugrov V.2
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Учреждения:
- Ioffe Institute
- ITMO University
- Выпуск: Том 52, № 2 (2018)
- Страницы: 195-208
- Раздел: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/202416
- DOI: https://doi.org/10.1134/S1063782618020112
- ID: 202416
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Аннотация
Microscopic analysis of intraband radiation absorption by holes with their transition to the spin-split band for InAsSb/AlSb and InGaAsP/InP semiconductor quantum wells is performed in the context of the four-band Kane model. The calculation is performed for two incident-radiation polarizations: along the crystal-growth axis and in the quantum-well plane. It is demonstrated that absorption with transition to the discrete spectrum of spin-split holes has a higher intensity than absorption with transitions to the continuous spectrum. The dependences of the intraband absorption coefficient on temperature, hole density, and quantum- well width are thoroughly analyzed. It is shown that intraband radiation absorption can be the main mechanism of internal radiation losses in lasers based on quantum wells.
Об авторах
N. Pavlov
Ioffe Institute
Автор, ответственный за переписку.
Email: pavlovnv@mail.ru
Россия, St. Petersburg, 194021
G. Zegrya
Ioffe Institute; ITMO University
Email: pavlovnv@mail.ru
Россия, St. Petersburg, 194021; St. Petersburg, 197101
A. Zegrya
Ioffe Institute
Email: pavlovnv@mail.ru
Россия, St. Petersburg, 194021
V. Bugrov
ITMO University
Email: pavlovnv@mail.ru
Россия, St. Petersburg, 197101