Мақаланы E-mail арқылы жіберу Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics
- Авторлар: Vigdorovich E.1, Ermoshin I.2
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Мекемелер:
- Moscow Technological University (MIREA)
- ZAO “Elma-Malakhit”
- Шығарылым: Том 51, № 13 (2017)
- Беттер: 1681-1685
- Бөлім: Materials for Electronic Engineering
- URL: https://journals.rcsi.science/1063-7826/article/view/202096
- DOI: https://doi.org/10.1134/S1063782617130140
- ID: 202096
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The structural quality of GaN/GaInN/Al2O3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.
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Авторлар туралы
E. Vigdorovich
Moscow Technological University (MIREA)
Хат алмасуға жауапты Автор.
Email: evgvig@mail.ru
Ресей, Moscow, 119454
I. Ermoshin
ZAO “Elma-Malakhit”
Email: evgvig@mail.ru
Ресей, Moscow, 124460
